Ferroelectric properties of direct-patternable La substituted Bi4Ti3O12 thin films formed by photochemical metal-organic deposition

Author:

PARK Hyeong-Ho1,LEE Hong-Sub1,PARK Hyung-Ho1,HILL Ross H.2,HWANG Yun Taek3

Affiliation:

1. Department of Materials Science & Engineering, Yonsei University

2. 4D Labs and Department of Chemistry, Simon Fraser University

3. Research & Development Division, Hynix Semiconductor Inc.

Publisher

Ceramic Society of Japan

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry,Ceramics and Composites

Reference24 articles.

1. 1) J. Y.-M. Lee, B. C. Lai, M. Nayak, S. Ezhilvalavan, T. Y. Tseng, C. Krug, I. J. R. Baumvol, F. Craciun, P. Verardi, M. Dinescu, J.-H. Yoon, T. K. Song, J. Mendiola, M. L. Calzada, R. M. Montereali, L.-H. Peng, F. A. Miranda, J. D. Warner, G. Subramanyam, S. P. Alpay, S. Ducharme, S. P. Palto, V. M. Fridkin, I. Chambouleyron and J. M. Martínez, "Handbook of thin film materials," Ed. by H. S. Nalwa, Academic Press, San Diego (2002) pp. 57-91.

2. Effect of Etch Gas on Dry Etching of Ferroelectric Bi3.25La0.75Ti3O12Thin Films

3. 3) D.-P. Kim, K.-T. Kim, C.-I. Kim and A. M. Efremov, Thin Solid Films, 447-448, 343-348 (2004).

4. Characterization and elimination of dry etching damaged layer in Pt/Pb(Zr0.53Ti0.47)O3/Pt ferroelectric capacitor

5. 5) J.-G. Kim, G.-H. Kim, K.-T. Kim and C.-I. Kim, Mat. Sci. Semicon. Proc., 9, 1108-1114 (2006).

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