Etch damage evaluation on (Bi4−xLax)Ti3O12 thin films during the etch process using inductively coupled plasma sources
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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4. Reactive ion beam etching of GaAs and related compounds in an inductively coupled plasma of Cl[sub 2]–Ar mixture
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1. Etch Damage of SiOC Thin Films in an Inductively Coupled Plasma Using Low-Frequency;Applied Science and Convergence Technology;2024-01-10
2. Etch Characteristics and Mechanism of TiSbTe Thin Films in Inductively-Coupled HBr-He, Ar, N2, O2Plasma;ECS Journal of Solid State Science and Technology;2016
3. Microstructure and Ferroelectric Properties of Direct-Patternable Bi3.25La0.75Ti3O12Films Prepared by Photochemical Metal-Organic Deposition;Ferroelectrics;2009-08-12
4. Electric and ferroelectric properties of PZT/BLT multilayer films prepared by photochemical metal-organic deposition;Applied Surface Science;2009-01
5. Ferroelectric properties of direct-patternable La substituted Bi4Ti3O12 thin films formed by photochemical metal-organic deposition;Journal of the Ceramic Society of Japan;2009
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