Etch Characteristics and Mechanism of TiSbTe Thin Films in Inductively-Coupled HBr-He, Ar, N2, O2Plasma-Reference-Cited by-同舟云学术

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Etch Characteristics and Mechanism of TiSbTe Thin Films in Inductively-Coupled HBr-He, Ar, N2, O2Plasma

Published:2016 Issue:6 Volume:5 Page:P330-P334
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Li Juntao,Xia Yangyang,Liu Bo,Wang Qing,Gao Dan,Xu Zhen,Wang Weiwei,Song Zhitang,Feng Gaoming,Zhou YaoHui,Wang Lei,Feng Songlin,Chan Yipeng

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference31 articles.

1. Lai S. Lowrey T. , Technical Digest in IEEE International Electron Devices Meeting, Washington, DC, USA 2001 36.5.1.

2. Towards a universal memory?

3. Breaking the Speed Limits of Phase-Change Memory

4. Reversible Electrical Switching Phenomena in Disordered Structures

5. Uniform Ti-doped Sb2Te3 materials for high-speed phase change memory applications

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of etching selectivity and microstructure of Ag-doped Sb2Te thin film for dry lithography;Semiconductor Science and Technology;2022-01-20

2. The etching process and mechanism analysis of Ta-Sb2Te3 film based on inductively coupled plasma;Journal of Semiconductors;2020-12-01

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