Breaking the Speed Limits of Phase-Change Memory-Reference-Cited by-同舟云学术

Breaking the Speed Limits of Phase-Change Memory

Published:2012-06-22 Issue:6088 Volume:336 Page:1566-1569
ISSN:0036-8075
Container-title:Science
language:en
Short-container-title:Science

Author:

Loke D.¹²³,Lee T. H.²,Wang W. J.¹,Shi L. P.¹,Zhao R.¹,Yeo Y. C.⁴,Chong T. C.⁵,Elliott S. R.²

Affiliation:

1. Data Storage Institute, Agency for Science, Technology and Research (A*STAR), 5 Engineering Drive 1, Singapore 117608.

2. Department of Chemistry, University of Cambridge, Lensfield Road, Cambridge CB2 1EW, UK.

3. National University of Singapore (NUS) Graduate School for Integrative Sciences and Engineering, 28 Medical Drive, Singapore 117456.

4. Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576.

5. Singapore University of Technology and Design, 20 Dover Drive, Singapore 138682.

Abstract

Exploiting Defects in a Jam Phase-change materials that can readily switch between crystalline and amorphous states are increasingly finding use in nonvolatile memory devices (see the Perspective by Hewak and Gholipour ). Using high-resolution transmission electron microscopy, Nam et al. (p. 1561 ) show that for Ge 2 Sb 2 Te 5 , the application of an electric field drives crystal dislocations in one direction, leading to their accumulation and eventual jamming, which causes the phase transition. Loke et al. (p. 1566 ) found that by applying a constant low voltage to Ge 2 Sb 2 Te 5 , they could accelerate its phase-switching speeds, without harming the long-term stability of the switched state.

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

Reference43 articles.

1. S. Lai T. Lowrey “OUM – A 180 nm nonvoltatile memory cell element technology for stand alone and embedded amplications ” in IEDM Tech. Digest (IEEE International Electron Devices Meeting Washington DC 2 to 5 December 2001) pp. 36.5.1–36.5.4; 10.1109/IEDM.2001.979636.10.1109/IEDM.2001.979636

2. A. Pirovano et al . “Scaling analysis of phase-change memory technology ” in IEDM Tech. Digest (IEEE International Electron Devices Meeting Washington DC 8 to 10 December 2003) pp. 29.6.1–29.6.4; 10.1109/IEDM.2003.1269376.10.1109/IEDM.2003.1269376

3. Towards a universal memory?

4. Phase Change Memory

5. Reversible Electrical Switching Phenomena in Disordered Structures

Cited by 706 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Scattering singularities in Fano-resonant multilayer grating structure with phase-change materials;Optics & Laser Technology;2025-02

2. Phase-change heterostructure with HfTe2 confinement sublayers for enhanced thermal efficiency and low-power operation through Joule heating localization;Journal of Materials Science & Technology;2025-01

3. Research progress in metamaterials and metasurfaces based on the phase change material Ge2Sb2Te5;Optics & Laser Technology;2024-10

4. Pattern search algorithm-aided structural color Sb2S3-based dynamic hybrid all-dielectric metasurface;Optics Communications;2024-10

5. Density functional theory and molecular dynamics simulations for resistive switching research;Materials Science and Engineering: R: Reports;2024-09