Device Reliability to Circuit Qualification: Insights and Challenges-Reference-Cited by-同舟云学术

Device Reliability to Circuit Qualification: Insights and Challenges

Published:2022-10-09 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE International Integrated Reliability Workshop (IIRW)
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Author:

Cacho F.¹,Bravaix A.²,Seybou T. Garba¹,Pitard H.²,Federspiel X.¹,Kumar T.¹,Giner F.¹,Michard A.¹,Celeste D.¹,Miller B.¹,Dhanda V.³,Varshney A.³,Tripathi V.³,Kumar J.³

Affiliation:

1. ST Microelectronics,Crolles,France,38926

2. ISEN Yncréa Méditerranée, IM2NP UMR 7334,Maison des Technologies,Toulon,France,83000

3. ST Microelectronics,Greater Noida,Uttar Pradesh,India,20130

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10032732/10032733/10077885.pdf?arnumber=10077885

Reference32 articles.

1. Experimental Proof of the Drain-Side Dielectric Breakdown of HKMG nMOSFETs Under Logic Circuit Operation

2. Modeling hot carrier damage interaction between on and off modes for 28 nm AC RF applications

3. Hot-Carrier acceleration factors for low power management in DC-AC stressed 40nm NMOS node at high temperature

4. Hot-Carrier degradation in P- and N-channel EDMOS for smart power application

5. New Modelling Off-state TDDB for 130nm to 28nm CMOS nodes

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Universal Dielectric Breakdown Modeling Under Off-State TDDB for Ultra-Scaled Device From 130nm to 28nm Nodes and Beyond;IEEE Transactions on Device and Materials Reliability;2024-06

2. Location of Oxide Breakdown Events under Off-state TDDB in 28nm N-MOSFETs dedicated to RF applications;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03