Experimental Proof of the Drain-Side Dielectric Breakdown of HKMG nMOSFETs Under Logic Circuit Operation-Reference-Cited by-同舟云学术

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Experimental Proof of the Drain-Side Dielectric Breakdown of HKMG nMOSFETs Under Logic Circuit Operation

Published:2015-05 Issue:5 Volume:36 Page:430-432
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Kupke Steve,Knebel Steve,Ocker Johannes,Slesazeck Stefan,Agaiby Rimoon,Trentzsch Martin,Mikolajick Thomas

Funder

Free State of Saxony

European Regional Development Fund

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/7091972/07058394.pdf?arnumber=7058394

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Integrated Test Circuit for Off-State Dynamic Drain Stress Evaluation;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03

2. Device Reliability to Circuit Qualification: Insights and Challenges;2022 IEEE International Integrated Reliability Workshop (IIRW);2022-10-09

3. Lateral profiling of gate dielectric damage by off-state stress and positive-bias temperature instability;Microelectronics Reliability;2021-12

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