Integrated Test Circuit for Off-State Dynamic Drain Stress Evaluation
Author:
Affiliation:
1. STMicroelectronics,Crolles,France,38926
2. Univ. Grenoble Alpes,CEA-Leti,Grenoble,France,F-38000
3. Univ. Grenoble Alpes, CNRS, Grenoble INP, Institute of Engineering Univ. Grenoble Alpes, TIMA,Grenoble,France
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10117589/10117581/10117885.pdf?arnumber=10117885
Reference11 articles.
1. Oxide Breakdown After RF Stress: Experimental Analysis and Effects on Power Amplifier Operation
2. 65nm RFSOI Power Amplifier Transistor Ageing at mm W frequencies, 14 GHz and 28 GHz
3. Comprehensive Analysis of RF Hot-Carrier Reliability Sensitivity and Design Explorations for 28GHz Power Amplifier Applications
4. Effect of off-State Stress and Drain Relaxation Voltage on Degradation of a Nanoscale nMOSFET at High Temperature
5. New Modelling Off-state TDDB for 130nm to 28nm CMOS nodes
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Universal Dielectric Breakdown Modeling Under Off-State TDDB for Ultra-Scaled Device From 130nm to 28nm Nodes and Beyond;IEEE Transactions on Device and Materials Reliability;2024-06
2. A Methodology to Address RF Aging of 40nm CMOS PA Cells Under 5G mmW Modulation Profiles;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14
3. Robustness Assessment Through 77GHz Operating Life Test of Power Amplifier for Radar Applications in 28nm FD-SOI CMOS;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14
4. Current Driven Modeling and SILC Investigation of Oxide Breakdown under Off-state TDDB in 28nm dedicated to RF applications;2023 IEEE International Integrated Reliability Workshop (IIRW);2023-10-08
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