Author:
Garba-Seybou T.,Bravaix A.,Federspiel X.,Cacho F.
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference25 articles.
1. Hot-electron-induced MOSFET degradation-model, monitor, and improvement;Hu;IEEE Trans. Electron Devices,1985
2. The energy driven paradigm of NMOSFET hot carrier effects;Rauch,2005
3. General framework about defect creation at Si/SiO2 interface;Guérin;J. Appl. Phys.,2009
4. Mixed hot-carrier/bias temperature instability degradation regimes in full vg, vd bias space: implications and peculiarities;Jech;IEEE Trans. Electron Devices,2020
5. Hot-carrier induced breakdown events from Off to On mode in NEDMOS;Bravaix,2020
Cited by
7 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献