Location of Oxide Breakdown Events under Off-state TDDB in 28nm N-MOSFETs dedicated to RF applications
Author:
Affiliation:
1. STMicroelectronics,Crolles,France,38920
2. ISEN Yncréa Méditerranée, REER-IM2NP UMR CNRS 7334,Toulon,France,83000
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10117589/10117581/10117725.pdf?arnumber=10117725
Reference30 articles.
1. Hot-Carrier degradation in P- and N-channel EDMOS for smart power application
2. Hot-Carrier induced Breakdown events from Off to On mode in NEDMOS
3. Off-state mode TDDB reliability for ultra-thin gate oxides: New methodology and the impact of oxide thickness scaling
4. Voltage-Splitting Technique for Reliability Evaluation of Off-State Mode of MOSFETs in Ultrathin Gate Oxides
5. Multi-probe Two-Dimensional Mapping of Off-State Degradation in DeNMOS Transistors: How and Why Interface Damage Predicts Gate Dielectric Breakdown
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Universal Dielectric Breakdown Modeling Under Off-State TDDB for Ultra-Scaled Device From 130nm to 28nm Nodes and Beyond;IEEE Transactions on Device and Materials Reliability;2024-06
2. Current Driven Modeling and SILC Investigation of Oxide Breakdown under Off-state TDDB in 28nm dedicated to RF applications;2023 IEEE International Integrated Reliability Workshop (IIRW);2023-10-08
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3