Reliable Gate Driving of SiC MOSFETs With Crosstalk Voltage Elimination and Two-Step Short-Circuit Protection
Author:
Affiliation:
1. Power Electronics Laboratory, Swiss Federal Institute of Technology Lausanne, Lausanne, Switzerland
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Control and Systems Engineering
Link
http://xplorestaging.ieee.org/ielx7/41/10103730/09967926.pdf?arnumber=9967926
Reference22 articles.
1. Fast-clamped short-circuit protection of IGBT's
2. Analysis of Parasitic Elements of SiC Power Modules With Special Emphasis on Reliability Issues
3. A Reliable Ultrafast Short-Circuit Protection Method for E-Mode GaN HEMT
4. IGBT fault current limiting circuit
5. Experimental and theoretical analyses of gate oxide and junction reliability for 4H-SiC MOSFET under short-circuit operation
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1. An Ultrafast Universal Short-Circuit Protection Technique Based on Gate Current Detection for SiC MOSFET;IEEE Transactions on Power Electronics;2024-10
2. A Gate Current Detection for Short-Circuit Protection of SiC MOSFET;2023 IEEE 4th China International Youth Conference On Electrical Engineering (CIYCEE);2023-12-08
3. Binary-weighted Modular Multi-level Digital Active Gate Driver;2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe);2023-09-04
4. Multi-Pulse Si-MOSFET Gate Driving Utilizing Gate Loop Inductance;IEEE Open Journal of Power Electronics;2023
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