Experimental and theoretical analyses of gate oxide and junction reliability for 4H-SiC MOSFET under short-circuit operation
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/55/i=12/a=124102/pdf
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5. Failure mechanism of trench IGBT under short-circuit after turn-off
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1. Reliable Gate Driving of SiC MOSFETs With Crosstalk Voltage Elimination and Two-Step Short-Circuit Protection;IEEE Transactions on Industrial Electronics;2023-10
2. Study on the Blocking Capability Decreasing of SiC MOSFET After Short-Circuit Gate-Source Failure;Lecture Notes in Electrical Engineering;2022
3. Investigations of short-circuit failure in double trench SiC MOSFETs through three-dimensional electro-thermal-mechanical stress analysis;Microelectronics Reliability;2021-07
4. Review of Methodologies for Evaluating Short-Circuit Robustness and Reliability of SiC Power MOSFETs;IEEE Journal of Emerging and Selected Topics in Power Electronics;2021
5. Determination of failure degree of 1.2 kV SiC MOSFETs after short-circuit test using an improved test setup;Nanotechnology and Precision Engineering;2020-12
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