Author:
Peng Jiaoyang,Sun Peng,Cai Yumeng,Zhang Haoran,Zhao Zhibin
Publisher
Springer Nature Singapore
Reference20 articles.
1. Puschkarsky, K., Grasser, T., Aichinger, T., et al.: Review on SiC MOSFETs high voltage device reliability focusing on threshold voltage instability. IEEE Trans. Electron Devices 66(11), 4604–4616 (2019)
2. Zeng, Z., Shao, W., Hu, B., et al.: Chances and challenges of photovoltaic inverters with silicon carbide devices. Proc. CSEE 37(01), 221–233 (2017). (in Chinese)
3. Santini, T., Sebastien, M., Florent, M., et al.: Gate oxide reliability assessment of a SiC MOSFET for high temperature aeronautic applications. In: ECCE Asia Downunder (ECCE Asia), Melbourne, VIC, Australia. IEEE (2013)
4. Zhou, X., Su, H., Wang, Y., et al.: Investigations on the degradation of 1.2-kV 4H-SiC MOSFETs under repetitive short-circuit tests. IEEE Trans. Electron Devices 63(99), 4346–4351 (2016). http://www.springer.com/lncs. Accessed 21 Nov 2016
5. Boige, F., Richardeau, F.: Gate leakage current analysis and modelling of planar and trench power SiC MOSFET devices in extreme short-circuit operation. Microelectron. Reliab. 76–77, 532–538 (2017)