An Ultrafast Universal Short-Circuit Protection Technique Based on Gate Current Detection for SiC MOSFET-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

An Ultrafast Universal Short-Circuit Protection Technique Based on Gate Current Detection for SiC MOSFET

Published:2024-10 Issue:10 Volume:39 Page:11931-11936
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Ke Zipeng¹,Wang Jun¹^ORCID,Hu Bo¹^ORCID,Song Xuanting¹^ORCID,Peng Zishun²,Dai Yuxing²^ORCID,Shen Z. John³^ORCID

Affiliation:

1. College of Electrical and Information Engineering, Hunan University, Changsha, China

2. National-Local Joint Engineering Laboratory of Digitalize Electrical Design Technology, Wenzhou University, Wenzhou, China

3. School of Mechatronic Systems Engineering, Simon Fraser University, Surrey, BC, Canada

Funder

Zhejiang Provincial Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/63/10659245/10531094.pdf?arnumber=10531094

Reference12 articles.

1. SiC Research Beyond Power MOSFET: What's Next? [Happenings]

2. Review of Methodologies for Evaluating Short-Circuit Robustness and Reliability of SiC Power MOSFETs

3. Eliminating Repetitive Short-Circuit Degradation and Failure of 1.2-kV SiC Power MOSFETs

4. Short-Circuit and Over-Current Fault Detection for SiC MOSFET Modules Based on Tunnel Magnetoresistance With Predictive Capabilities

5. Comparison and Discussion on Shortcircuit Protections for Silicon-Carbide MOSFET Modules: Desaturation Versus Rogowski Switch-Current Sensor

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Methodology for Characterizing Degradation Locations of Planar and Trench Gate SiC Power Mosfets Under Repetitive Short-Circuit Stress;IEEE Transactions on Power Electronics;2024-11

2. Review on Short-Circuit Protection Methods for SiC MOSFETs;Energies;2024-09-09

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3