High efficiency LDMOS power FET for low voltage wireless communications
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx3/4251/12029/00553129.pdf?arnumber=553129
Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A novel high performance LDMOS transistor with high channel density;Journal of Computational Electronics;2017-09-15
2. High holding voltage segmentation stacking silicon-controlled-rectifier structure with field implant as body ties blocking layer;Japanese Journal of Applied Physics;2016-03-02
3. HiSIM-HV: A Compact Model for Simulation of High-Voltage MOSFET Circuits;IEEE Transactions on Electron Devices;2010-10
4. A Short-Channel SOI RF Power LDMOS Technology With$hboxTiSi_2$Salicide on Dual Sidewalls With Cutoff Frequency$f_T sim hbox19.3 hboxGHz$;IEEE Electron Device Letters;2006-11
5. Electrical Characteristics of CMOS Circuit Due to Channel Region Parameters in LDMOSFET;Transactions on Electrical and Electronic Materials;2006-06-01
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