High holding voltage segmentation stacking silicon-controlled-rectifier structure with field implant as body ties blocking layer-Reference-Cited by-同舟云学术

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High holding voltage segmentation stacking silicon-controlled-rectifier structure with field implant as body ties blocking layer

Published:2016-03-02 Issue:4S Volume:55 Page:04ER10
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yen Shiang-Shiou,Cheng Chun-Hu,Lan Yu-Pin,Chiu Yu-Chien,Fan Chia-Chi,Hsu Hsiao-Hsuan,Chang Shao-Chin,Jiang Zhe-Wei,Hung Li-Yue,Tsai Chi-Chung,Chang Chun-Yen

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/55/i=4S/a=04ER10/pdf

Reference33 articles.

1. An optimized RESURF LDMOS power device module compatible with advanced logic processes

2. High efficiency LDMOS power FET for low voltage wireless communications

3. High performance silicon LDMOS technology for 2 GHz RF power amplifier applications

4. A LDMOS technology compatible with CMOS and passive components for integrated RF power amplifiers

5. Improving Breakdown Voltage of LDMOS Using a Novel Cost Effective Design

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of Double-Snapback Characteristic in Resistor-Triggered SCRs Stacking Structure;IEEE Transactions on Electron Devices;2017-10

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