A LDMOS technology compatible with CMOS and passive components for integrated RF power amplifiers-Reference-Cited by-同舟云学术

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A LDMOS technology compatible with CMOS and passive components for integrated RF power amplifiers

Published:2000-02 Issue:2 Volume:21 Page:82-84
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Tan Y.,Kumar M.,Sin J.K.O.,Cai J.,Lau J.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/17811/00821677.pdf?arnumber=821677

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design of an LDMOS Transistor Based on the 1 µm CMOS Process for High/Low Power Applications;ICCEIS 2021;2022-02-10

2. Two‐dimensional simulation studies of the breakdown voltage of a p channel LDMOS;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2021-02-14

3. High holding voltage segmentation stacking silicon-controlled-rectifier structure with field implant as body ties blocking layer;Japanese Journal of Applied Physics;2016-03-02

4. Fabrication and characterization of the normally-off N-channel lateral 4H–SiC metal–oxide–semiconductor field-effect transistors;Chinese Physics B;2016-03

5. Design and Layout Strategy in the 60-V Power pLDMOS with Drain-End Modulated Engineering of Reliability Considerations;IEEE Transactions on Power Electronics;2015

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