A Short-Channel SOI RF Power LDMOS Technology With$hboxTiSi_2$Salicide on Dual Sidewalls With Cutoff Frequency$f_T sim hbox19.3 hboxGHz$-Reference-Cited by-同舟云学术

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A Short-Channel SOI RF Power LDMOS Technology With$hboxTiSi_2$Salicide on Dual Sidewalls With Cutoff Frequency$f_T sim hbox19.3 hboxGHz$

Published:2006-11 Issue:11 Volume:27 Page:917-919
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Yang R.,Li J.F.,Qian H.,Lo G.Q.,Balasubramanian N.,Kwong D.L.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/36104/01715466.pdf?arnumber=1715466

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An Analytical Model of the Electric Field Distribution and Breakdown Voltage for Stepped Compound Buried Layer SOI LDMOS;2022 International Conference on Electrical, Computer and Energy Technologies (ICECET);2022-07-20

2. A new RF trench-gate multi-channel laterally-diffused MOSFET on InGaAs;Journal of Semiconductors;2017-09

3. Fully tensile strained partial silicon-on-insulator n-type lateral-double-diffused metal-oxide-semiconductor field effect transistor using localized contact etching stop layers;AIP Advances;2017-05

4. SOI Dual-Gate Trench LDMOSFET for RF Integrated Power Amplifiers;IETE Technical Review;2016-07-28

5. A Multi-Channel Trench-Gate Radio Frequency LDMOS on Silicon-on-Insulator;IETE Technical Review;2016-04-08

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