SOI Dual-Gate Trench LDMOSFET for RF Integrated Power Amplifiers
Author:
Affiliation:
1. Department of Electronics & Communication Engineering, G. B. Pant Engineering College, Pauri Garhwal, India
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/02564602.2016.1199978
Reference31 articles.
1. RF Power Amplifiers
2. Lateral Power Transistors in Integrated Circuits
3. A Development Summarization of the Power Semiconductor Devices
4. A Development Summarization of the Power Semiconductor Devices II
5. A novel analytical model of the vertical breakdown voltage on impurity concentration in top silicon layer for SOI high voltage devices
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1. Analysis of DCTLDMOS on SOI for Power Amplifier Applications;Silicon;2022-05-16
2. High performance dual-gate SiGe MOSFET for radio-frequency applications;AEU - International Journal of Electronics and Communications;2019-10
3. Cost-Optimized Energy-efficient Power Amplifier for TD-LTE Outdoor Pico Base Station;IETE Journal of Research;2019-08-15
4. Implementation of Trench-based Power LDMOS and Low Voltage MOSFET on InGaAs;IETE Technical Review;2018-04-11
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