Fully tensile strained partial silicon-on-insulator n-type lateral-double-diffused metal-oxide-semiconductor field effect transistor using localized contact etching stop layers
Author:
Affiliation:
1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, China
2. Wuxi I-Core Electronics Co., Ltd., Wuxi, Jiangsu 214072, China
Funder
Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices
Scientific Research Project of Land and Resources Department of Sichuan Province
National Natural Science Foundation of China (NSFC)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4983214
Reference11 articles.
1. Investigation of SOI-LDMOS for RF-Power Applications Using Computational Load Pull
2. R. Sithanandam and M. J. Kumar, in Proceedings of 23rd International Conference on VLSI Design, Bangalore, India (2010), pp. 230–234.
3. A Short-Channel SOI RF Power LDMOS Technology With$hboxTiSi_2$Salicide on Dual Sidewalls With Cutoff Frequency$f_T sim hbox19.3 hboxGHz$
4. Dependence of temperature and self-heating on electron mobility in ultrathin body silicon-on-insulator n-metal-oxide-semiconductor field-effect transistors
5. Efficient Thermal Modeling of SOI MOSFETs for Fast Dynamic Operation
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1. New Strained Silicon-On-Insulator Lateral MOSFET With Ultralow ON-Resistance by Si1-xGex P-Top Layer and Trench Gate;IEEE Electron Device Letters;2021-06
2. Performance Boosts in n-Type Lateral Double-Diffused MOSFET With Process-Induced Strain Using Contact Etch Stop Layer Stressor;IEEE Transactions on Electron Devices;2021-01
3. New Strained LDMOS With Ultralow ON-Resistance by Si1−y C y Source Stressor for About 20 V Low-Voltage Applications;IEEE Transactions on Electron Devices;2020-11
4. Comprehensive Stress Effect of Thin Coatings and Silicon–Carbon Lattice Mismatch on Nano-Scaled Transistors with Protruding Poly Gate;Journal of Nanoscience and Nanotechnology;2020-02-01
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