Dependence of temperature and self-heating on electron mobility in ultrathin body silicon-on-insulator n-metal-oxide-semiconductor field-effect transistors-Reference-Cited by-同舟云学术

Dependence of temperature and self-heating on electron mobility in ultrathin body silicon-on-insulator n-metal-oxide-semiconductor field-effect transistors

Published:2008-05 Issue:9 Volume:103 Page:094522
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Shim Tae-Hun,Kim Seong-Je,Lee Gon-Sub,Kim Kwan-Su,Cho Won-Ju,Park Jea-Gun

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2913498

Reference26 articles.

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4. Measurement and modeling of self-heating in SOI nMOSFET's

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