Nano-scaled transistor reliability characterization at nano-second regime

Author:

Cheng Ran,Sun Ying,Qu Yiming,Liu Wei,Liu Fanyu,Gao Jianfeng,Xu Nuo,Chen Bing

Publisher

Springer Science and Business Media LLC

Subject

General Computer Science

Reference8 articles.

1. Shim T H, Kim S J, Lee G S, et al. Dependence of temperature and self-heating on electron mobility in ultra-thin body silicon-on-insulator n-metal-oxide-semiconductor field-effect transistors. J Appl Phys, 2008, 103: 094522

2. Beppu N, Oda S, Uchida K. Experimental study of self-heating effect (SHE) in SOI MOSFETs: accurate understanding of temperatures during AC conductance measurement, proposals of 2ω method and modified pulsed IV. In: Proceedings of International Electron Devices Meeting, 2012. 1–4

3. Prasad C, Ramey S, Jiang L. Self-heating in advanced CMOS technologies. In: Proceedings of IEEE International Reliability Physics Symposium, 2017. 1–7

4. Liu S E, Wang J S, Lu Y R, et al. Self-heating effect in FinFETs and its impact on devices reliability characterization. In: Proceedings of International Reliability Physics Symposium, 2014. 1–4

5. Jin M, Liu C, Kim J, et al. Hot carrier reliability characterization in consideration of self-heating in FinFET technology. In: Proceedings of International Reliability Physics Symposium, 2016

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