Investigation of Self-Heating Effects in UTBB FD-SOI MOSFETs by a Modified Thermal Conductivity Model-Reference-Cited by-同舟云学术

Investigation of Self-Heating Effects in UTBB FD-SOI MOSFETs by a Modified Thermal Conductivity Model

Author:

Xing Qian¹^ORCID,Su Yali²,Lai Junhua¹^ORCID,Li Bo³^ORCID,Li Binghong³,Bu Jianhui³^ORCID,Zhang Guohe¹^ORCID

Affiliation:

1. School of Microelectronics, Xi’an Jiaotong University, Xi’an, China

2. School of Mechanical Engineering, Xi’an Shiyou University, Xi’an, China

3. Key Laboratory of Silicon Device and Technology, Chinese Academy of Sciences, Beijing, China

Funder

Opening Fund of the Key Laboratory of Silicon Device and Technology, Chinese Academy of Sciences

Youth Innovation Promotion Association CAS

Natural Science Foundation of Shaanxi Province, China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

Reference40 articles.

2. Self-heating effects in SOI MOSFET’s operated at low temperature;jomaah;Proc IEEE Int SOI Conf,1993

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