Thermal cross-coupling effects in side-by-side UTBB-FDSOI transistors

Author:

Costa Fernando J.,Trevisoli Renan,Doria Rodrigo T.

Funder

CAPES

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference27 articles.

1. Cramming more components onto integrated circuits;Moore;Electronics,1965

2. Short-channel effect in fully depleted SOI MOSFETs;Young;IEEE Trans Eletron Dev,1989

3. Silicon-on-Insulator Technology: Materials to VLSI,2004

4. Impact of self-heating effects on the design of SOI devices versus temperature;Jomaah;Proc IEEE Int SOI Conf,1995

5. Pop E, et al. Thermal analysis of ultra-thin body device scaling. In: IEDM Tech. Dig., p. 883–4; 2003.

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1. Analysis of Standard-MOS and Ultra-Low-Power Diodes Composed by SOI UTBB Transistors;IEEE Journal of the Electron Devices Society;2023

2. Investigation of Self-Heating Effects in UTBB FD-SOI MOSFETs by a Modified Thermal Conductivity Model;IEEE Transactions on Electron Devices;2022-08

3. Cross-coupling effects in common-source current mirrors composed by UTBB transistors;Solid-State Electronics;2022-08

4. Ultra-Low-Power Diodes Composed by SOI UTBB Transistors;2022 IEEE Latin American Electron Devices Conference (LAEDC);2022-07-04

5. SOI UTBB Capacitive Cross-Coupling Effects in Ultimate Technological Nodes;2022 IEEE 13th Latin America Symposium on Circuits and System (LASCAS);2022-03-01

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