Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Modelling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference25 articles.
1. Singh, Y., Rawat, R.S.: High figure-of-merit SOI power LDMOS for power integrated circuits. Eng. Sci. Technol. Int. J. 18(2), 141–149 (2015)
2. Ma, G., Burger, W., Dragon, C.: High efficiency LDMOS power FET for low voltage wireless communications. In: Proceedings of IEDM (1996)
3. Parthasarathy, V., Zhu, R., Peterson, W., Zunino, M. and Baird, R.: A 33 V, 0.25 $$\mu $$ μ m-cm $$^{2}$$ 2 n-channel LDMOS in a 0.65 $$\mu $$ μ m smart power technology for 20–30 V applications. In: Proceedings of IEEE ISPSD, pp. 61–64 (1998)
4. Orouji, A.A., Pak, A.: A novel technique for electric field control to improve breakdown voltage. Mater. Sci. Semicond. Process. 34, 230–235 (2015)
5. Kobori, E., Izumi, N., Kumamoto, N., Hamazawa, Y., Matsumoto, M., Yamamoto, K., Kamisawa, A.: Efficiency of power devices using full Cu metallization technologies. In: Proceedings of IEEE ISPSD, pp. 67–70 (1999)
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献