Dual injection enhanced super junction TIGBT with narrow mesa and floating-P region
Author:
Funder
Nanjing Science and Technology Program, China
Guangdong Basic and Applied Basic Research Foundation, China
Publisher
Springer Science and Business Media LLC
Link
https://link.springer.com/content/pdf/10.1007/s10825-024-02218-w.pdf
Reference28 articles.
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2. Bernet, S.: Recent developments of high power converters for industry and traction applications. IEEE Trans. Power Electron (2000). https://doi.org/10.1109/63.892825
3. Shenai, K.: The invention and demonstration of the IGBT [A Look Back]. IEEE Power Electronics Magazine 2(2), 12–16 (2015). https://doi.org/10.1109/MPEL.2015.2421751
4. Laska, T., Munzer, M., Pfirsch, F., Schaeffer, C., Schmidt, T.: The field stop IGBT (FS IGBT). A new power device concept with a great improvement potential. In: Proc. IEEE 12th international symposium power semiconductor devices IC’s (ISPSD), 355–358, (2000) https://doi.org/10.1109/ISPSD.2000.856842.
5. Ikura, Y., Onozawa, Y., Nakagawa, A.: Study of the electrostatic potential of the floating-p region during the turn-on period of IGBT. In: Proc. IEEE 29th international symposium power semiconductor devices IC’s (ISPSD), pp. 123–126, (2017) https://doi.org/10.23919/ispsd.2017.7988942.
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