Feasibility of using W/TiN as metal gate for conventional 0.13 μm CMOS technology and beyond
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx3/5237/14153/00650508.pdf?arnumber=650508
Cited by 46 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Implementation of software for data processing of X-ray optical measurements for the analysis of structural parameters;Journal of Applied Crystallography;2019-02-01
2. The effects of process condition of top-TiN and TaN thickness on the effective work function of MOSCAP with high-k/metal gate stacks;Journal of Semiconductors;2014-10
3. Lateral Nonuniformity of the Tunneling Current of Al/SiO2/p-Si Capacitor in Inversion Region Due to Edge Fringing Field Effect;ECS Transactions;2013-08-31
4. Gate contact materials in Si channel devices;MRS Bulletin;2011-02
5. Nanoscale Wet Etching of Physical-Vapor-Deposited Titanium Nitride and Its Application to Sub-30-nm-Gate-Length Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor Fabrication;Japanese Journal of Applied Physics;2010-06-21
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