Nanoscale Wet Etching of Physical-Vapor-Deposited Titanium Nitride and Its Application to Sub-30-nm-Gate-Length Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor Fabrication-Reference-Cited by-同舟云学术

Nanoscale Wet Etching of Physical-Vapor-Deposited Titanium Nitride and Its Application to Sub-30-nm-Gate-Length Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor Fabrication

Published:2010-06-21 Issue:6 Volume:49 Page:06GH18
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Liu Yongxun,Kamei Takahiro,Endo Kazuhiko,O'uchi Shinichi,Tsukada Junichi,Yamauchi Hiromi,Hayashida Tetsuro,Ishikawa Yuki,Matsukawa Takashi,Sakamoto Kunihiro,Ogura Atsushi,Masahara Meishoku

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference9 articles.

1. Investigation of the TiN Gate Electrode With Tunable Work Function and Its Application for FinFET Fabrication

2. Nitrogen Gas Flow Ratio and Rapid Thermal Annealing Temperature Dependences of Sputtered Titanium Nitride Gate Work Function and Their Effect on Device Characteristics

3. A Comparative Study of Nitrogen Gas Flow Ratio Dependence on the Electrical Characteristics of Sputtered Titanium Nitride Gate Bulk Planar Metal–Oxide–Semiconductor Field-Effect Transistors and Fin-Type Metal–Oxide–Semiconductor Field-Effect Transistors

4. Threshold-Voltage Reduction of FinFETs by Ta/Mo Interdiffusion Dual Metal-Gate Technology for Low-Operating-Power Application

5. Etching of TiN-based gates for advanced complementary metal-oxide-semiconductor devices

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