Implementation of software for data processing of X-ray optical measurements for the analysis of structural parameters

Abstract

The development of semiconductor nanoelectronic technology requires the use of new approaches to metrological control of critically important stages of device structure formation. The development and use of complex measurement methods based on various physical principles allowing one to obtain exhaustive information about the features of real structures, including the existence of hidden and unaccounted layers in transition areas, are of special interest. This paper presents the idea of implementing a complex approach to X-ray optical studies for a two-wavelength measurement scheme, including the methods of relative X-ray reflectometry, refractometry and diffuse X-ray scattering, and its application to the analysis of dimensional parameters of thin-film structures. The study was carried out with the help of a software package for analysing TiN diffusion-barrier layers. A comparison of the results obtained with the results of one-wavelength methods shows the high efficiency of the implemented approach for performing various tasks of metrological control of nanoelectronic devices.