A 4T2R RRAM Bit Cell for Highly Parallel Ternary Content Addressable Memory-Reference-Cited by-同舟云学术

A 4T2R RRAM Bit Cell for Highly Parallel Ternary Content Addressable Memory

Published:2021-10 Issue:10 Volume:68 Page:4933-4937
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Wang Xuehong^ORCID,Wang Linfang^ORCID,Wang Ye^ORCID,An Junjie,Dou Chunmeng^ORCID,Wu Zuheng,Zhang Xumeng^ORCID,Liu Jing^ORCID,Zhang Chenggao^ORCID,Yao Zhihong,Yu Zhaoan,Shi Tuo,Chen Chixiao^ORCID,Jiang Xiping,Chang Meng-Fan^ORCID,Liu Qi^ORCID

Funder

National Key Research and Development Program of China

NSFC of China

Strategic Priority Research Program of the Chinese Academy of Sciences

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9546692/09527329.pdf?arnumber=9527329

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