SOT-MRAM-Based Approximate Content Addressable Memory for DNA Classification-Reference-Cited by-同舟云学术

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SOT-MRAM-Based Approximate Content Addressable Memory for DNA Classification

Published:2024-09 Issue:9 Volume:71 Page:5732-5738
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Shaban Ahmed¹^ORCID,Hou Tuo-Hung²^ORCID,Suri Manan¹^ORCID

Affiliation:

1. Department of Electrical Engineering, Indian Institute of Technology Delhi, New Delhi, India

2. Department of Electrical Engineering, Institute of Electronics and the Industry Academia Innovation School, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/16/10645717/10599282.pdf?arnumber=10599282

Reference29 articles.

1. RAMANN

2. Ferroelectric ternary content-addressable memory for one-shot learning

3. A Resistive CAM Processing-in-Storage Architecture for DNA Sequence Alignment

4. GeNVoM: Read Mapping Near Non-Volatile Memory

5. A 4T2R RRAM Bit Cell for Highly Parallel Ternary Content Addressable Memory

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