Self-Aligned Double Injection-Function TFT for Deep Sub-Micrometer Channels’ Length—Application to Solution-Processed Indium Gallium Zinc Oxide
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9690079/09676335.pdf?arnumber=9676335
Reference34 articles.
1. Contact engineering in vertical hybrid field effect transistor
2. Thermally Stable Amorphous Oxide-based Schottky Diodes through Oxygen Vacancy Control at Metal/Oxide Interfaces
3. A Universal Method to Produce Low–Work Function Electrodes for Organic Electronics
4. Intrinsic Gain in Self-Aligned Polysilicon Source-Gated Transistors
5. Enhanced Electrical Properties of Thin-Film Transistor with Self-Passivated Multistacked Active Layers
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Fully atomic layer deposition induced InAlO thin film transistors;Vacuum;2024-09
2. 22‐2: Significant Improvement of a‐IGZO Source‐Gated Transistor Current over Traditional Design through Architecture Modification;SID Symposium Digest of Technical Papers;2024-06
3. High-performance ultrathin solution-processed SnO2 top-gate thin-film transistors by constructing high-quality dielectric/channel interface;Surfaces and Interfaces;2024-05
4. Insight into the evolution of electrical properties for Schottky-barrier IGZO thin-film transistors with Cu-based Schottky contacts;Applied Physics Letters;2023-09-04
5. Impact of the Source/Drain Electrode Process on the Mobility-Threshold Trade-Off for InSnZnO Thin-Film Transistors;ACS Applied Electronic Materials;2023-02-21
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3