Thermally Stable Amorphous Oxide-based Schottky Diodes through Oxygen Vacancy Control at Metal/Oxide Interfaces-Reference-Cited by-同舟云学术

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Thermally Stable Amorphous Oxide-based Schottky Diodes through Oxygen Vacancy Control at Metal/Oxide Interfaces

Published:2019-05-27 Issue:1 Volume:9 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Lim Seung-Min,Yeon Han-Wool,Lee Gi-Baek,Jin Min-Gi,Lee Seung-Yong,Jo Janghyun,Kim Miyoung,Joo Young-Chang

Funder

National Research Foundation of Korea

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/s41598-019-44421-x.pdf

Reference33 articles.

1. Hady, F. T., Foong, A., Veal, B. & Williams, D. Platform Storage Performance With 3D XPoint. Technology. P Ieee 105, 1822–1833, https://doi.org/10.1109/Jproc.2017.2731776 (2017).

2. Kim, K. H. et al. A functional hybrid memristor crossbar-array/CMOS system for data storage and neuromorphic applications. Nano Lett 12, 389–395, https://doi.org/10.1021/nl203687n (2012).

3. Jo, S. H. et al. Nanoscale memristor device as synapse in neuromorphic systems. Nano Lett 10, 1297–1301, https://doi.org/10.1021/nl904092h (2010).

4. Kuegeler, C., Meier, M., Rosezin, R., Gilles, S. & Waser, R. High density 3D memory architecture based on the resistive switching effect. Solid State Electron 53, 1287–1292, https://doi.org/10.1016/j.sse.2009.09.034 (2009).

5. Shin, Y. C. et al. (In,Sn)2O3∕TiO2∕Pt Schottky-type diode switch for the TiO2 resistive switching memory array. Applied Physics Letters 92, https://doi.org/10.1063/1.2912531 (2008).

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