Non-stoichiometric WO3−x-based nanoscale memristor for high-density memory-Reference-Cited by-同舟云学术

Non-stoichiometric WO3−x-based nanoscale memristor for high-density memory

Published:2023-08-01 Issue:8 Volume:13 Page:085011
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Rudrapal Krishna¹,Das Sourav²,Basori Rabaya²^ORCID,Banerji Pallab³^ORCID,Adyam Venimadhav⁴,Roy Chaudhuri Ayan^ORCID

Affiliation:

1. Advanced Technology Development Centre, Indian Institute of Technology Kharagpur, 721302 West Bengal, India

2. School of Nano Science and Technology, Indian Institute of Technology Kharagpur, 721302 West Bengal, India

3. Materials Science Centre, Indian Institute of Technology Kharagpur, 721302 West Bengal, India

4. Cryogenic Engineering, Indian Institute of Technology Kharagpur, 721302 West Bengal, India

Funder

Science and Engineering Research Board

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference38 articles.

1. In-memory computing with resistive switching devices

2. Artificial Neural Network Based on Doped HfO2 Ferroelectric Capacitors With Multilevel Characteristics

3. M. Alayan, Investigation of HfO2 Based Resistive Random Access Memory (RRAM): Characterization and Modeling of Cell Reliability and Novel Access Device (Université Grenoble Alpes, 2018).

4. Subfilamentary Networks Cause Cycle-to-Cycle Variability in Memristive Devices

5. Crossbar RRAM Arrays: Selector Device Requirements During Write Operation

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