22‐2: Significant Improvement of a‐IGZO Source‐Gated Transistor Current over Traditional Design through Architecture Modification

Abstract

We introduce a new architecture, alternative double work function (a‐DWF), device to dramatically enhance the output current of source gated transistors (SGT) while retaining low voltage saturation. The smaller output current of SGT and previous DWF devices compared to conventional thin‐film transistors (TFT) has previously limited their application range.