Air-Gap Technology With a Large Void-Fraction for Global Interconnect Delay Reduction-Reference-Cited by-同舟云学术

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Air-Gap Technology With a Large Void-Fraction for Global Interconnect Delay Reduction

Published:2021-10 Issue:10 Volume:68 Page:5078-5084
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Prawoto Clarissa^ORCID,Ma Zichao^ORCID,Xiao Ying^ORCID,Raju Salahuddin^ORCID,Chan Mansun^ORCID

Funder

Basic and Applied Basic Research Foundation of Guangdong Province

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9546692/09521978.pdf?arnumber=9521978

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of Airgaps for OFF-State Capacitance Reduction in SOI-CMOS RF Switches;IEEE Transactions on Electron Devices;2023-11

2. Contact Pad Design Considerations for Semiconductor Qubit Devices for Reducing On-Chip Microwave Crosstalk;IEICE Transactions on Electronics;2023-10-01

3. Ultralow-k Amorphous Boron Nitride Film for Copper Interconnect Capping Layer;IEEE Transactions on Electron Devices;2023-05

4. Hollow Airgap Technology for CMOS Maximum Interconnect Capacitance Reduction;2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT);2022-10-25

5. Low-Loss RF Passive Elements by Top-Metal Air-Gap Technology;2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2022-03-06

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