Ultralow-<i>k</i> Amorphous Boron Nitride Film for Copper Interconnect Capping Layer-Reference-Cited by-同舟云学术

Ultralow-k Amorphous Boron Nitride Film for Copper Interconnect Capping Layer

Published:2023-05 Issue:5 Volume:70 Page:2588-2593
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Kim Kiryong¹^ORCID,Kim Hyeongjoon²,Lee Sun-Woo³^ORCID,Lee Min Yung⁴,Lee Gyusoup¹^ORCID,Park Youngkeun¹,Kim Heetae¹,Lee Yun Hee¹,Kim Minsu²,Ma Kyung Yeol²,Kim Min Ju⁵,Kim Taek-Soo³^ORCID,Shin Hyeon Suk²,Cho Byung Jin¹^ORCID

Affiliation:

1. School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, South Korea

2. Department of Chemistry, Ulsan National Institute of Science and Technology, Ulsan, South Korea

3. School of Mechanical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, South Korea

4. PI Research Laboratory, SK Hynix Inc, Icheon, South Korea

5. School of Electronics and Electrical Engineering, Dankook University, Gyeonggi, South Korea

Funder

SK Hynix Inc

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10106527/10079183.pdf?arnumber=10079183

Reference34 articles.

1. Advanced metal and dielectric barrier cap films for Cu low k interconnects

2. In Situ Co/SiC(N,H) Capping Layers for Cu/Low- k Interconnects

3. BEOL compatible graphene/Cu with improved electromigration lifetime for future interconnects

4. Reduced Cu interface diffusion by CoWP surface coating

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