Analysis of Airgaps for OFF-State Capacitance Reduction in SOI-CMOS RF Switches-Reference-Cited by-同舟云学术

Analysis of Airgaps for OFF-State Capacitance Reduction in SOI-CMOS RF Switches

Published:2023-11 Issue:11 Volume:70 Page:5814-5817
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Gheysens Daniel¹^ORCID,Fleury Alain¹^ORCID,Monfray Stéphane¹,Gianesello Frédéric¹,Cathelin Philippe¹,Troadec David²,Robillard Jean François²,Dubois Emmanuel²^ORCID

Affiliation:

1. STMicroelectronics, Crolles, France

2. Univ. Lille, CNRS, Univ. Polytechnique Hauts-de-France, JUNIA, UMR 8520-IEMN-Institut d’Electronique, de Microélectronique et de Nanotechnologie, Lille, France

Funder

STMicroelectronics–Institut d’Electronique, de Microélectronique et de Nanotechnologie (IEMN) Joint Laboratory

French Government through the National Research Agency (ANR) through Program Projet d’Investissement d’Avenir (PIA) Equipment of Excellence (EQUIPEX) Laser Processing Platform for Functional Packaging

French RENATECH Network on Micro and Nanotechnologies

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10294316/10255670.pdf?arnumber=10255670

Reference23 articles.

1. Reliable airgap BEOL technology in advanced 48 nm pitch copper/ULK interconnects for substantial power and performance benefits

2. A 14 nm logic technology featuring 2nd-generation FinFET, air-gapped inter-connects, self-aligned double patterning and a 0.0588 ?m2 SRAMcell size;natarajan;IEDM Tech Dig,2014

3. Substrate-Induced Dissipative and Non-Linear Effects in RF Switches: Probing Ultimate Performance Based on Laser-Machined Membrane Suspension

4. Air-Gap Technology With a Large Void-Fraction for Global Interconnect Delay Reduction

5. Development of air-gap etching process by a mask approach for characterization of intralayer and interlayer capacitances