Reliable airgap BEOL technology in advanced 48 nm pitch copper/ULK interconnects for substantial power and performance benefits-Reference-Cited by-同舟云学术

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Reliable airgap BEOL technology in advanced 48 nm pitch copper/ULK interconnects for substantial power and performance benefits

Published:2017-05 Issue: Volume: Page:
ISSN:
Container-title:2017 IEEE International Interconnect Technology Conference (IITC)
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Author:

Penny C.,Gates S.,Peethala B.,Lee J.,Priyadarshini D.,Nguyen S.,McLaughlin P.,Liniger E.,Hu C.-K.,Clevenger L.,Hook T.,Shobha H.,Kerber P.,Seshadri I.,Chen J.,Edelstein D.,Quon R.,Bonilla G.,Paruchuri V.,Huang E.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7961614/7968934/07968970.pdf?arnumber=7968970

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interconnects Materials for Integrated Circuit Technology Below 5 Nm Node;Микроэлектроника;2024-07-17

2. Materials for Interconnections of Integrated Circuits with Design Standards Less Than 5 nm;Russian Microelectronics;2024-02

3. Analysis of Airgaps for OFF-State Capacitance Reduction in SOI-CMOS RF Switches;IEEE Transactions on Electron Devices;2023-11

4. Airgap Insertion and Layer Reassignment Under Setup and Hold Timing Constraints;IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems;2023-03

5. Using Many Small 1T1C Memory Arrays in a Large and Dense Multicore Processor;Proceedings of the 2022 International Symposium on Memory Systems;2022-10-03

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