Plasma PH<inf>3</inf>-passivated high mobility inversion InGaAs MOSFET fabricated with self-aligned gate-first process and HfO<inf>2</inf>/TaN gate stack-Reference-Cited by-同舟云学术

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Plasma PH3-passivated high mobility inversion InGaAs MOSFET fabricated with self-aligned gate-first process and HfO2/TaN gate stack

Published:2008-12 Issue: Volume: Page:
ISSN:
Container-title:2008 IEEE International Electron Devices Meeting
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Author:

Lin Jianqiang,Lee Sungjoo,Oh Hoon-Jung,Yang Weifeng,Lo G. Q.,Kwong D. L.,Chi D. Z.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4786613/4796592/04796705.pdf?arnumber=4796705

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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