Performances of accumulation-mode n- and p-MOSFETs on Si(110) wafers
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/56/i=4S/a=04CD15/pdf
Reference54 articles.
1. Modelling of the hole mobility in p-channel MOS transistors fabricated on (1 1 0) oriented silicon wafers
2. Record ION/IOFF performance for 65nm Ge pMOSFET and novel Si passivation scheme for improved EOT scalability
3. Comparative analysis of SOI and GOI MOSFETs
4. Plasma PH3-passivated high mobility inversion InGaAs MOSFET fabricated with self-aligned gate-first process and HfO2/TaN gate stack
5. Very High Carrier Mobility for High-Performance CMOS on a Si(110) Surface
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1. Novel Analytical Model for Computing Subthreshold Current in Heterostructure p-MOSFET incorporating Band-To-Band Tunneling Effect;Journal of Physics: Conference Series;2020-07-01
2. Observation of the Magnetization Reorientation in Self-Assembled Metallic Fe-Silicide Nanowires at Room Temperature by Spin-Polarized Scanning Tunneling Spectromicroscopy;Coatings;2019-05-10
3. Carrier Mobility in Field-Effect Transistors;Different Types of Field-Effect Transistors - Theory and Applications;2017-06-07
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