High-Performance FinFET with Dopant-Segregated Schottky Source/Drain-Reference-Cited by-同舟云学术

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High-Performance FinFET with Dopant-Segregated Schottky Source/Drain

Published:2006-12 Issue: Volume: Page:
ISSN:
Container-title:2006 International Electron Devices Meeting
language:
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Author:

Kaneko A.,Yagishita A.,Yahashi K.,Kubota T.,Omura M.,Matsuo K.,Mizushima I.,Okano K.,Kawasaki H.,Izumida T.,Kanemura T.,Aoki N.,Kinoshita A.,Koga J.,Inaba S.,Ishimaru K.,Toyoshima Y.,Ishiuchi H.,Suguro K.,Eguchi K.,Tsunashima Y.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4154162/4139311/04154361.pdf?arnumber=4154361

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modifying the Power and Performance of 2-Dimensional MoS ₂ Field Effect Transistors;Research;2023-01

2. Formation technology of flat surface with epitaxial growth on ion-implanted (100)-oriented Si surface of thin silicon-on-insulator;Japanese Journal of Applied Physics;2017-09-19

3. Extraction of source/drain resistivity parameters optimized for double-gate FinFETs;Japanese Journal of Applied Physics;2015-01-29

4. Introduction to Schottky-Barrier MOS Architectures: Concept, Challenges, Material Engineering and Device Integration;Nanoscale CMOS;2013-03-05

5. Compact Double-Gate MOSFET Model Correctly Predicting Volume-Inversion Effects;Simulation of Semiconductor Processes and Devices 2007

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