Capacitance modeling of laterally non-uniform MOS devices

Author:

Aarts A.C.T.,van der Hout R.,Paasschens J.C.J.,Scholten A.J.,Willemsen M.,Klaassen D.B.M.

Publisher

IEEE

Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. An Improved Quasi-Saturation and Charge Model for SOI-LDMOS Transistors;IEEE Transactions on Electron Devices;2015-03

2. A surface-potential-based MOSFET compact model accounting for random doping fluctuations;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2013-12-17

3. SP-HV: A Scalable Surface-Potential-Based Compact Model for LDMOS Transistors;IEEE Transactions on Electron Devices;2012-03

4. Nanoscale FETs;Silicon-Based Millimeter-wave Technology - Measurement, Modeling and Applications;2012

5. Modeling of High Voltage MOSFETs Based on EKV (HV-EKV);POWER/HVMOS Devices Compact Modeling;2010

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