A surface-potential-based MOSFET compact model accounting for random doping fluctuations-Reference-Cited by-同舟云学术

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A surface-potential-based MOSFET compact model accounting for random doping fluctuations

Published:2013-12-17 Issue:5-6 Volume:27 Page:748-760
ISSN:0894-3370
Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
language:en
Short-container-title:Int. J. Numer. Model.

Author:

Donati Guerrieri S.¹,Cappelluti Federica¹,Bonani Fabrizio¹,Ghione Giovanni¹

Affiliation:

1. Dipartimento di Elettronica e Telecomunicazioni, Politecnico di Torino, Corso Duca degli Abruzzi 24; Torino 10129 Italy

Funder

European Project ENIAC-MODERN ï¿½MOdeling and DEsign of Reliable, process variation-aware Nanoelectronic devices, circuits and systemsï¿½, WP2.

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modelling and Simulation

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/jnm.1958/fullpdf

Reference29 articles.

1. Analog circuit design in nanoscale CMOS technologies;Lewyn;Proc IEEE,2009

2. Modeling process variability in scaled CMOS technologies;Saha;IEEE Des Test Comput,2010

3. Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFET's;Asenov;IEEE Trans El Dev,2003

4. Process-variation effect, metal-gate work-function fluctuation, and random-dopant fluctuation in emerging CMOS technologies;Li;IEEE Trans El Dev,2010

5. Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 μm MOSFET's: a 3-D atomistic simulation study;Asenov;IEEE Trans El Dev,1998

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