Author:
Chauhan Yogesh Singh,Krummenacher Francois,Ionescu Adrian Mihai
Reference46 articles.
1. Y.S. Chauhan, C. Anghel, F. Krummenacher, R. Gillon, A. Baguenier, B. Desoete, S. Frere, A.M. Ionescu, M. Declercq, A compact DC and AC model for circuit simulation of high voltage VDMOS transistor, in IEEE International Symposium on Quality Electronic Design (ISQED), March 2006, pp. 109–114
2. Y.S. Chauhan, C. Anghel, F. Krummenacher, A.M. Ionescu, M. Declercq, R. Gillon, S. Frere, B. Desoete, A highly scalable high voltage MOSFET model, in IEEE European Solid-State Device Research Conference (ESSDERC), Sept 2006, pp. 270–273
3. C. Enz, F. Krummenacher, E. Vittoz, An analytical MOS transistor model valid in all regions of operation and dedicated to low-voltage and low-current applications. J. Analog Integr. Circ. S 8(1), 83–114 (July 1995)
4. Y.S. Chauhan, C. Anghel, F. Krummenacher, C. Maier, R. Gillon, B. Bakeroot, B. Desoete, S. Frere, A.B. Desormeaux, A. Sharma, M. Declercq, A.M. Ionescu, Scalable general high voltage MOSFET model including quasi-saturation and self-heating effect. Solid State Electron. 50(11–12), 1801–1813 (2006)
5. Y.S. Chauhan, R. Gillon, B. Bakeroot, F. Krummenacher, M. Declercq, A.M. Ionescu, An EKV-based high voltage MOSFET model with improved mobility and drift model. Solid State Electron. 51(11–12), 1581–1588 (2007)
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献