Scalable general high voltage MOSFET model including quasi-saturation and self-heating effects

Author:

Chauhan Yogesh Singh,Anghel Costin,Krummenacher Francois,Maier Christian,Gillon Renaud,Bakeroot Benoit,Desoete Bart,Frere Steven,Desormeaux Andre Baguenier,Sharma Abhinav,Declercq Michel,Ionescu Adrian Mihai

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 35 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Small-Signal and Large-Signal RF Characterization and Modeling of Low and High Voltage FinFETs for 14/16 nm Technology Node SoCs;IEEE Journal of the Electron Devices Society;2024

2. Characterization and Modeling of 14-/16-nm FinFET-Based LDMOS;IEEE Transactions on Electron Devices;2024-01

3. High-Frequency Characterization and Modeling of Low and High Voltage FinFETs for RF SoCs;2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2023-03-07

4. Robust Compact Model of High-Voltage MOSFET’s Drift Region;IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems;2023-01

5. A physics-based compact model of shield gate trench MOSFET;Microelectronics Journal;2023-01

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