An analytical MOS transistor model valid in all regions of operation and dedicated to low-voltage and low-current applications-Reference-Cited by-同舟云学术

An analytical MOS transistor model valid in all regions of operation and dedicated to low-voltage and low-current applications

Published:1995-07 Issue:1 Volume:8 Page:83-114
ISSN:0925-1030
Container-title:Analog Integrated Circuits and Signal Processing
language:en
Short-container-title:Analog Integr Circ Sig Process

Author:

Enz Christian C.,Krummenacher Fran�ois,Vittoz Eric A.

Publisher

Springer Science and Business Media LLC

Subject

Surfaces, Coatings and Films,Hardware and Architecture,Signal Processing

Link

http://link.springer.com/content/pdf/10.1007/BF01239381.pdf

Reference27 articles.

1. Y. P. Tsividis,Operation and Modelling of the MOS Transistor, McGraw-Hill, 1987.

2. C. C. Enz, ?High precision CMOS micropower amplifiers,? Ph.D. thesis, No. 802, EPFL, Lausanne, 1989.

3. E. A. Vittoz, ?Micropower techniques,? inDesign of MOS VLSI Circuits for Telecommunications, edited by J. Franca and Y. Tsividis, Prentice-Hall, 1993.

4. E. A. Vittoz, ?MOS transistor,? Intensive Summer Course on CMOS & BiCMOS VLSI Design, Analog&Digital, Lausanne (EPFL), Switzerland, September 1993.

5. J. A. van Nielen and O. W. Memelink, ?Influence of substrate upon the DC characteristics of MOS transistors,? Philips Research Reports, vol. 22 pp. 55?71, 1967.

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