Nanoscale FETs-Reference-Cited by-同舟云学术

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Nanoscale FETs

Published:2012 Issue: Volume: Page:261-347
ISSN:1076-5670
Container-title:Silicon-Based Millimeter-wave Technology - Measurement, Modeling and Applications
language:
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Author:

Moldovan Oana,Lázaro Antonio,Danneville François,Picos Rodrigo,Nae Bogdan,Iniguez Benjamin,Deen M. Jamal

Publisher

Elsevier

Reference188 articles.

1. A PSP-based small-signal MOSFET model for both quasi-static and nonquasi-static operations;Aarts;IEEE Transactions on Electron Devices,2008

2. Capacitance modeling of laterally non-uniform MOS devices;Aarts;IEDM Technical Digest,2004

3. From SOI materials to innovative devices;Allibert;Solid-State Electronics,2001

4. A flicker noise cancellation technique for low-voltage direct-conversion mixers;Asgaran;Electronics Letters,2007

5. Design of the input matching network of RF CMOS LNAs for low-power operation;Asgaran;IEEE Transactions on Circuits and Systems I,2007

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