Feasible Integration Scheme for Dual Work Function FUSI/HfSiON Gate Stacks with Selective Metal Pile-up to nMOSFET-Reference-Cited by-同舟云学术

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Feasible Integration Scheme for Dual Work Function FUSI/HfSiON Gate Stacks with Selective Metal Pile-up to nMOSFET

Published:2007 Issue: Volume: Page:
ISSN:
Container-title:2007 IEEE International Electron Devices Meeting
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Author:

Tsuchiya Yoshinori,Yoshiki Masahiko,Kaneko Akio,Inumiya Seiji,Saito Tomohiro,Nakajima Kazuaki,Aoyama Tomonori,Koga Junji,Nishiyama Akira,Koyama Masato

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4418847/4418848/04418989.pdf?arnumber=4418989

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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