Electronic and structural characteristics of Zr-incorporated Gd2O3 films on strained SiGe substrates
Author:
Publisher
AIP Publishing
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3140203
Reference18 articles.
1. Intermixing at the tantalum oxide/silicon interface in gate dielectric structures
2. High-κ Dielectric Materials for Microelectronics
3. Thermal stability of ultrathin ZrO2 films prepared by chemical vapor deposition on Si(100)
4. Band offsets of wide-band-gap oxides and implications for future electronic devices
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1. Polymorphism in Gd2Ge2O7 ceramics: Structural, vibrational, and optical features;Ceramics International;2021-06
2. Phase Transformation of Molecular Beam Epitaxy-Grown Nanometer-Thick Gd2O3 and Y2O3 on GaN;ACS Applied Materials & Interfaces;2013-02-08
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