A New Metal–Insulator–Metal Capacitor with Nickel Fully Silicided Polycrystalline Silicon Electrodes
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference37 articles.
1. Ultrahigh Capacitance Density for Multiple ALD-Grown MIM Capacitor Stacks in 3-D Silicon
2. Ferroelectric behavior in nominally relaxor lead lanthanum zirconate titanate thin films prepared by chemical solution deposition on copper foil
3. Copper Compatible Barium Titanate Thin Films for Embedded Passives
4. Hot sputtering of barium strontium titanate on nickel foils
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A Cost-Effective $\hbox{Ni/Nb}_{2}\hbox{O}_{5}\hbox{/} \hbox{Al}_{2}\hbox{O}_{3}\hbox{/}\hbox{Ni}_{2}\hbox{Si}$ Metal–Insulator–Metal Capacitor Processed at 300 $^{\circ}\hbox{C}$ Using Laser Annealing and a Fully Silicided Amorphous Silicon Bottom Electrode;IEEE Transactions on Electron Devices;2011-11
2. Comparison of Multilayer Dielectric Thin Films for Future Metal–Insulator–Metal Capacitors: Al$_{2}$O$_{3}$/HfO$_{2}$/Al$_{2}$O$_{3}$ versus SiO$_{2}$/HfO$_{2}$/SiO$_{2}$;Japanese Journal of Applied Physics;2011-10-20
3. Comparison of Multilayer Dielectric Thin Films for Future Metal–Insulator–Metal Capacitors: Al2O3/HfO2/Al2O3versus SiO2/HfO2/SiO2;Japanese Journal of Applied Physics;2011-10-01
4. A New Cost-Effective Metal–Insulator–Metal Capacitor Processed at 350 $^{\circ}\hbox{C}$ Using $ \hbox{Ni}_{2}\hbox{Si}$ Fully Silicided Amorphous Silicon Electrodes;IEEE Transactions on Electron Devices;2011-03
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